MDMA240UB1600ED 12-14 41-44 7-9 2-4 21/22 29 17-19 23-25 47-50 3~ rectifier bridge + brake unit standard rectifier module part number MDMA240UB1600ED backside: isolated features / advantages: applications: package: package with dcb ceramic improved temperature and power cycling planar passivated chips very low forward voltage drop very low leakage current x2pt - 2nd generation xtreme light punch through rugged x2pt design results in: - short circuit rated for 10 sec. - very low gate charge - low emi - square rbsoa @ 2x ic thin wafer technology combined with x2pt design results in a competitive low vce(sat) and low thermal resistance 3~ rectifier with brake unit for drive inverters e2-pack industry standard outline rohs compliant soldering pins for pcb mounting height: 17 mm base plate: dcb ceramic reduced weight advanced power cycling isolation voltage: v~ 3600 the data contained in this product data sheet is ex clusively intended for technically trained staff. t he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect t o his application. the specifications of our compon ents may not be considered as an assurance of compo nent characteristics. the information in the valid application- and assembly notes must be considered. should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. due to technical requirements our product may conta in dangerous substances. for information on the typ es in question please contact your local sales offi ce. should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. for any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. terms and conditions of usage rrm 1600 i 240 fsm 1500 dav v = va a == i 3~ rectifier ces 1200 brake chopper i 180 ce(sat) 1.7 c25 v = v av == v ixys reserves the right to change limits, condition s and dimensions. 20171130f data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MDMA240UB1600ED v = v ka2s ka2s ka2s ka2s symbol definition ratings typ. max. i r v i a v f 1.28 r 0.4 k/w r min. 240 v rsm v 100 t = 25c vj t = c vj ma 2 v = v r t = 25c vj i = a f v t = c c 85 p tot 312 w t = 25c c r k/w 0.1 80 1600 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation conditions unit 1.92 t = 25c vj 150 v f0 v 0.80 t = c vj 150 r f 5.2 m ? v 1.22 t = c vj i = a f v 80 2.02 i = a f 240 i = a f 240 threshold voltage slope resistance for power loss calculation only a 125 v rrm v 1600 max. repetitive reverse blocking voltage t = 25c vj c j 58 junction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 150 1.50 1.62 8.13 7.87 ka ka ka ka 1.28 1.38 11.3 10.9 1600 dav d = rectangular 120 bridge output current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1700 ixys reserves the right to change limits, condition s and dimensions. 20171130f data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MDMA240UB1600ED t = 125c v ces v 1200 collector emitter voltage collector emitter saturation voltage t = 25c collector current a 180 a c vj symbol definition ratings typ. max. min. conditions unit 140 v v ce(sat) total power dissipation 500 w collector emitter leakage current 7.5 v turn-on delay time 230 ns t reverse bias safe operating area a v ges v 20 v gem max. transient gate emitter voltage t = c c v p tot gate emitter threshold voltage rbsoa 300 30 t = 125c t = 125c vj v max. dc gate voltage i c25 i c t = 25c vj i = a; v = 15 v c ge t = 25c vj v ge(th) i ces i = ma; v = v c ge ce v = v ; v = 0 v ce ces ge i ges t = 25c vj gate emitter leakage current v = 20 v ge 2.1 1.9 6.8 6 ma 0.1 ma 0.1 500 g(on) total gate charge v = v; v = 15 v; i = a ce q ge c 340 nc tt t e e d(on) r d(off) f on off 70 ns 380 ns 230 ns 12.5 mj 11.5 mj current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load v = v; i = a v = 15 v; r = ? ce c ge g v = 15 v; r = ? ge g v = v cek 1200 short circuit safe operating area s scsoa 10 t = 125c vj v = v; v = 15 v ce ge short circuit duration t short circuit current i sc sc r = ? ; non-repetitive g 450 a r thjc thermal resistance junction to case 0.10 k/w v rrm v 1200 max. repetitive reverse voltage t = 25c vj t = 25c forward current a 88 a c 59 t = c c i f25 i f t = 25c forward voltage v 2.20 v vj 1.95 t = 125c vj v f i = a f t = 25c reverse current ma 0.1 ma vj 1.2 t = 125c vj i r r rrm t = 125c vj qi t rr rm rr 9.6 c 47 a 450 ns reverse recovery charge max. reverse recovery current reverse recovery time v = -di /dt = a/s i = a f f e rec 3 mj reverse recovery energy r r thjc thermal resistance junction to case 0.6 k/w v = v t = 25c c t = 25c vj t = 125c vj vj 100 4 100 100 60 60 6.8 6.8 6.8 600 720 900 600 i cm 1.7 r thch thermal resistance case to heatsink 0.25 k/w 0.1 r thch thermal resistance case to heatsink k/w brake igbt + diode brake diode 600 v 80 80 80 80 na v = v cek 1200 ixys reserves the right to change limits, condition s and dimensions. 20171130f data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MDMA240UB1600ED ratings xxxxxxxxxx yywwx logo ul part number date code 2d data matrix location d m m a 240 ub 1600 ed part description diode standard rectifier (up to 1800v) 3~ rectifier bridge + brake unit e2-pack module = = = = current rating [a] reverse voltage [v] = = = = package t op c m d nm 6 mounting torque 3 t vj c 150 virtual junction temperature -40 weight g 176 symbol definition typ. max. min. conditions operation temperature unit v v t = 1 second v t = 1 minute isolation voltage mm mm 6.0 12.0 d spp/app creepage distance on surface | striking distance th rough air d spb/apb terminal to backside i rms rms current 200 a per terminal 125 -40 terminal to terminal e2-pack delivery mode quantity code no. ordering number marking on product ordering 50/60 hz, rms; i 1 ma isol MDMA240UB1600ED 520461 box 6 MDMA240UB1600ED standard 3600 isol t stg c 125 storage temperature -40 3000 threshold voltage v 0.8 m ? v 0 max r 0 max slope resistance * 2.1 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 150 c * on die level ixys reserves the right to change limits, condition s and dimensions. 20171130f data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MDMA240UB1600ED 107,5 0,3 93 0,2 79,2 45 0,2 32 0,2 11 0 44 35 43 42 41 40 39 38 37 36 26 34 33 32 31 30 29 28 27 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 73,17 61,74 16,02 19,83 76,98 54,12 38,88 42,69 20,6 0,5 17 0,5 3,5 0,5 23,64 35,07 57,93 80,79 vor der montage typ. 100 m konvex ber 75 mm before mounting typ. 100 m convex over 75 mm 16,02 19,83 23,64 69,36 a d 0,8 0,05 15 1 detail d c 0,8 0,2 1,2 0,05 detail c 7.62 7.62 11.43 15.24 25 24 23 22 21 20 11,43 7,62 7,62 11,43 0 45 46 47 50 49 48 ? 5,5 +0,1 - 0,3 41,90 index bemerkung / note: - nichttolerierte ma?e nach / measure without tolerances according din iso 2768-t 1-m - pcb-lochmuster / pcb hole pattern: see pin position - toleranz pin-position und pcb-lochmuster / tolerance of pin position and pcb hole pattern: 0.1 - montageanleitung / mounting instruction: www.ixys.com application note ixan0024 detail a : pcb-montage / mounting on pcb - empfohlene, selbstschneidende schraube / recommended, self-tapping screw: ejot pt ? (gr??e / size: k25 ) - max. schraubenl?nge / max. screw length: pcb-dicke / thickness + 6 mm ( max. lochtiefe / hole depth) - empfohlenes drehmoment / recommended mounting torque: 1.5 nm 6 detail a ? 6 ? 2,5 -0,3 ? 2,1 -0,3 1,5 +0,3 12,21 15.24 12-14 41-44 7-9 2-4 21/22 29 17-19 23-25 47-50 outlines e2-pack ixys reserves the right to change limits, condition s and dimensions. 20171130f data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MDMA240UB1600ED 0.001 0.01 0.1 1 600 800 1000 1200 2 3 4 5 6 7 8 9 01 1 10 3 10 4 10 5 0.5 1.0 1.5 2.0 2.5 0 50 100 150 200 250 3 00 0 20 40 60 80 100 0 20 40 60 80 100 120 140 160 1 10 100 1000 10000 0.0 0.1 0.2 0.3 0.4 0.5 0 50 100 150 0 30 60 90 120 150 180 i f [ a] v f [v] i fsm [a] t [s] i 2 t [a 2 s] t [ms] p tot [w] i f(av)m [a] t amb [c] i f(av)m [a] t c [c] z thjc [k/w] fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current vs. time per diode fig. 3 i 2 t versus time per diode fig. 4 power dissipation vs. forward current and ambient temperature per diode fig. 5 max. forward current vs. case temperature per diode fig. 6 transient thermal impedance junction to case vs. tim e per diode t [ms] constants for z thjc calculation: i r thi (k/w) t i (s) 1 0.050 0.010 2 0.003 0.007 3 0.090 0.055 4 0.187 0.250 5 0.070 0.120 0 50 100 150 50 hz, 80%v rrm t vj = 45c t vj = 45c v r = 0 v t vj = 150c t vj = 150c t vj = 25c t vj = 125c t vj = 150c dc = 1 0.5 0.4 0.33 0.17 0.08 dc = 1 0.5 0.4 0.33 0.17 0.08 r thha = 0.2 k/w 0.4 k/w 0.6 k/w 0.8 k/w 1.0 k/w 2.0 k/w rectifier ixys reserves the right to change limits, condition s and dimensions. 20171130f data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
MDMA240UB1600ED 0.001 0.01 0.1 1 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 6 7 8 9 10 11 12 13 0 20 40 60 80 100 120 140 i c [a] t [ns] v f [v] t [s] z thjc [k/w] fig.2 typ. output characteristics igbt fig. 3 typ. transfer charact. igbt fig. 6 typ. forward characteristics diode fig. 9 transient thermal resistance junction to case 0 1 2 3 0 20 40 60 80 100 120 140 i c [a] v ce [v] fig.1 output characteristics igbt 0 1 2 3 4 0 20 40 60 80 100 120 140 i c [a] v ce [v] v ge [v] 10 20 30 40 50 0 2 4 6 8 10 12 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 0 20 40 60 80 100 0 4 8 12 16 20 i f [a] i rr e rec e rec [mj] r g [ohm] fig. 7 typ. reverse recovery c ha r a c t e r i s t i c s d iod e fig. 8 typ. reverse recovery characteristics diode 0 40 80 120 160 0 10 20 30 40 0 200 400 600 800 e off [mj] i c [a] fig. 5 typ. turn-off energy & switch. times vs. collector current 0 40 80 120 160 0 100 200 300 400 0 20 40 60 80 e on [ mj] i c [a] t d(on) e on fig. 4 typ. turn-on energy & switch. times vs. collector current t r t r [ns] e rec [ mj] i rr [a] i rr [a] 25c 125c 9 v 11 v 13 v 25c 125c e off t f t d(off) i f [a] 25c 125c e rec i rr v ce = 20 v v ge = 19 v 17 v 15 v t vj = 125c r g = 18 ohm v ce = 900 v v ge = 15 v t vj = 125c r g = 18 ohm v ce = 900 v v ge = 15 v t vj = 125c r g =18 ohm v r = 900 v t vj = 125c t vj = 125c v r = 900 v i f = 60 a brake igbt + diode ixys reserves the right to change limits, condition s and dimensions. 20171130f data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
|
